Search results for "Transparent conducting film"
showing 10 items of 13 documents
Rock-salt CdZnO as a transparent conductive oxide
2018
Transparent conducting oxides (TCOs) are widely used in applications from solar cells to light emitting diodes. Here, we show that the metal organic chemical vapor deposition (MOCVD)-grown, rock-salt CdZnO ternary, has excellent potential as a TCO. To assess this compound, we use a combination of infrared reflectance and ultraviolet-visible absorption spectroscopies, together with Hall effect, to determine its optical and electrical transport characteristics. It is found that the incorporation of Zn produces an increment of the electron concentration and mobility, yielding lower resistivities than those of CdO, with a minimum of 1.96 × 10 − 4 Ω · cm for a Zn content of 10%. Moreover, due to…
Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells
2012
We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions, improvements of ≈10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface.
Plasmonic modes in molybdenum ultra-thin films suitable for hydrogenated amorphous silicon thin film solar cells
2014
We have recently demonstrated that molybdenum ultra-thin films interposed between hydrogenated amorphous silicon (a-Si:H) and SnO2:F transparent conductive oxide (TCO) in thin film solar cells show light trapping effects which enhance the solar cells performances. The effect of this improvement may be attributed to surface plasmon polariton (SPP) modes excited at the molybdenum interface by the solar radiation. In this paper we show direct evidence of such SPP modes in the case of the molybdenum/air interface by using the attenuated total reflection (ATR) technique, pioneered by Kretschmann, and we evaluate the dielectric constant of molybdenum at 660 nm. (C) 2013 The Authors. Published by …
Surface Coatings Based on Polysilsesquioxanes: Solution-Processible Smooth Hole-Injection Layers for Optoelectronic Applications
2009
Optoelectronic devices usually consist of a transparent conductive oxide (TCO) as one electrode. Interfacial engineering between the TCO electrode and the overlying organic layers is an important method for tuning device performance. We introduce poly(methylsilsesquioxane)-poly(N,N-di-4-methylphenylamino styrene) (PMSSQ-PTPA) as a potential hole-injection layer forming material. Spin-coating and thermally induced crosslinking resulted in an effective planarization of the anode interface. HOMO level (-5.6 eV) and hole mobility (1 × 10(-6) cm(2) · Vs(-1) ) of the film on ITO substrates were measured by cyclovoltammetry and time-of-flight measurement demonstrating the hole injection capabili…
Deposition of indium tin oxide films by laser ablation: Processing and characterization
1998
Abstract In this work an indium tin oxide thin film fabrication technique based on pulsed laser deposition is described and the electrical, optical and mechanical properties of the deposited films are reported. Deposition of high quality films on cold substrates was proved. The third harmonic (355 nm) of an Nd:YAG laser was employed to photoablade the indium tin oxide target.
Optimization of ZnO:Al/Ag/ZnO:Al structures for ultra-thin high-performance transparent conductive electrodes
2012
Al-doped ZnO (AZO)/Ag/AZO multilayer coatings (50-70 nm thick) were grown at room temperature on glass substrates with different silver layer thickness, from 3 to 19 nm, by using radio frequency magnetron sputtering. Thermal stability of the compositional, optical and electrical properties of the AZO/Ag/AZO structures were investigated up to 400 °C and as a function of Ag film thickness. An AZO film as thin as 20 nm is an excellent barrier to Ag diffusion. The inclusion of 9.5 nm thin silver layer within the transparent conductive oxide (TCO) material leads to a maximum enhancement of the electro-optical characteristics. The excellent measured properties of low resistance, high transmittanc…
Colloidal Self-assembled Nanosphere Arrays for Plasmon-enhanced Light Trapping in Thin Film Silicon Solar Cells
2014
To realize high-efficiency thin-film silicon solar cells it is crucial to develop light-trapping methods that can increase absorption of the near- bandgap light in the silicon material. That can be achieved using the far-field scattering properties of metal nanoparticles (MNP) sustaining surface plasmons. The MNPs should be inserted in the back of the cell, embedded in the transparent conductive oxide (TCO) layer which separates the rear mirror from the silicon layers. In this way, a plasmonic back reflector (PBR) is constructed that can redirect light at angles away from the incidence direction and thereby increase its path length in the cell material. In this work, a novel technique is pr…
Yttrium-doped hematite photoanodes for solar water splitting: Photoelectrochemical and electronic properties
2018
Abstract We investigate yttrium-doped hematite thin-film photoelectrochemical properties and find yttrium incorporation to amply improve the performance as a photoanode for water splitting under visible light. We used the spray pyrolysis method to prepare a set of yttrium doped Fe2-xYxO3 (x = 0, 0.05, 0.10, 0.15, 0.2) thin films (thickness below 500 nm) on glass and transparent conductive oxide coated glass slides. Using a substitutional homovalent (Y3+) dopant, the effect on functionality is rationalised as a combined effect on the electronic structure and small polaron mobility from the lattice structure, impurity levels, lattice stability and variance in hybridisation. The photoelectroch…
Role of the Back Metal-Semiconductor Contact on the Performances of a-Si:H Solar Cells
2011
We have investigated the role of the metal-semiconductor back contact on the performances of thin film modules consisting of single junction a-Si:H photovoltaic (PV) cells deposited with p-i-n configuration. We find that an adequate choice of the back contact helps reducing the barrier height of the junction improving the contact conductivity. For this purpose Mo has shown to be effective. Moreover we find that Mo, as refractory material, has additional beneficial effects reducing the formation of defects leading to the decrease of recombination losses. We have then fabricated a PV module on flexible substrate for indoor energy harvesting applications using Mo as back contact. An efficiency…
Transparent conductive oxide photonic crystals on textured substrates
2011
Three-dimensional ZnO:Al photonic crystals were fabricated by atomic layer deposition on highly textured substrates. It turns out that these inverted opals consist of a thin intermediate disordered layer close to the textured substrate followed by a highly-ordered photonic crystal layer. The photonic crystals themselves exhibit comparable optical properties to those on planar substrates.